נשלח: 08 ינואר 2005, 10:05
זה גוק הזיכרון 28F640J3 64mb
General Information
Device Description 64 Megabit Intel StrataFlash® Memory
Architecture ETOX-VI
Die Stepping Revision A-0
Die Size 341.1 x 230.7 Mils
Number of Transistors 32,000,000
ESD Pass Voltage
(mil-883c, m3015) +/- 2000 V
Icc Typical
(5v, hot c, no resistive loads) 31mA @ 5 Mhz CMOS
Icc Max
(5v, hot c, no resistive loads) 35mA @ 5 Mhz CMOS
Die Bond Pad Dimensions 100 U x 125 U
Process Information
Process 802
Package Information
Designator E
Package Type TSOP
Number of Leads 56
Thermal Impedance (Theta jA) = 76.0 C/Watt
(Theta jC) = 10.0 C/Watt
General Information
Device Description 64 Megabit Intel StrataFlash® Memory
Architecture ETOX-VI
Die Stepping Revision A-0
Die Size 341.1 x 230.7 Mils
Number of Transistors 32,000,000
ESD Pass Voltage
(mil-883c, m3015) +/- 2000 V
Icc Typical
(5v, hot c, no resistive loads) 31mA @ 5 Mhz CMOS
Icc Max
(5v, hot c, no resistive loads) 35mA @ 5 Mhz CMOS
Die Bond Pad Dimensions 100 U x 125 U
Process Information
Process 802
Package Information
Designator E
Package Type TSOP
Number of Leads 56
Thermal Impedance (Theta jA) = 76.0 C/Watt
(Theta jC) = 10.0 C/Watt